快速发布采购 管理采购信息

B772 PDF Datasheet浏览和下载

型号.:
B772
PDF下载:
下载PDF文件
内容描述:
PNP外延平面晶体管
[PNP EPITAXIAL PLANAR TRANSISTOR]
文件大小:
44 K
文件页数:
4 Pages
品牌Logo:
品牌名称:
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
  • 供货商
  • IC型号
  • 厂家
  • 批号
  • 数量
  • 封装
  • 单价/备注
  • 操作
 浏览型号B772的Datasheet PDF文件第2页浏览型号B772的Datasheet PDF文件第3页浏览型号B772的Datasheet PDF文件第4页 
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25°C)
TO-126ML
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
200
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
E
200-400
HSB772
HSMC Product Specification