HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6523
Issued Date : 1992.11.25
Revised Date : 2001.06.06
Page No. : 1/3
HSC1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC1815 is designed for use in driver stage of AF amplifier
general purpose amplification.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 50 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ....................................................................................................... 150 mA
IB Base Current ............................................................................................................... 50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1
700
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE1
Rank
Range
Y
120-240
GR
200-400
BL
350-700
HSC1815
HSMC Product Specification