HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
4.5
110
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 2/5
Units
°C/W
°C/W
ELectrical Characteristics
(T
J
=25°C, unless otherwise specified)
Symbol
•
Off Characteristics
V
DSS
∆BV
DSS
/∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Breakdown Voltage Temperature Coefficient (I
D
=250uA, Referenced
to 25
o
C)
Zero Gate Voltage Drain Current (V
DS
=600V, V
GS
=0V)
Zero Gate Voltage Drain Current (V
DS
=480V, T
j
=125°C)
Gate-Body Leakage Current-Forward (V
GS
=30V, V
DS
=0V)
Gate-Body Leakage Current-Reverse (V
GS
=-30V, V
DS
=0V)
600
-
-
-
-
-
-
0.6
-
-
-
-
-
-
1
50
100
-100
V
V/
o
C
uA
uA
nA
nA
Characteristic
Min.
Typ.
Max.
Unit
•
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=0.6A)
*3
Forward Transconductance (V
DS
=40V, I
D
=0.5A)
*3
2
-
-
-
-
0.75
4
8
-
V
Ω
S
•
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
-
-
-
210
19
4
250
25
8
pF
•
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=480V, I
D
=1.1A
V
GS
=10V
*3
V
DD
=300V, I
D
=1.1A
R
G
=25Ω
*3
-
-
-
-
-
-
-
-
-
-
-
15
4
3
30
60
45
75
20
-
-
nC
ns
•
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Qrr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage (V
GS
=0V, I
S
=1A)
Reverse Recovery Time (V
GS
=0V, I
S
=1.1A, dl
F
/dt=100A/us)
*3
Reverse Recovery Charge (V
GS
=0V, I
S
=1.1A, dl
F
/dt=100A/us)
*3
-
-
-
-
-
-
-
-
190
0.53
1
4
1.4
-
-
A
A
V
ns
nC
*3: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H01N60I, H01N60J
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
