欢迎访问ic37.com |
会员登录 免费注册
发布采购

H03N60E 参数 Datasheet PDF下载

H03N60E图片预览
型号: H03N60E
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率场效应晶体管 [N-Channel Power Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 5 页 / 59 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号H03N60E的Datasheet PDF文件第2页浏览型号H03N60E的Datasheet PDF文件第3页浏览型号H03N60E的Datasheet PDF文件第4页浏览型号H03N60E的Datasheet PDF文件第5页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
H03N60 Series
N-Channel Power Field Effect Transistor
H03N60 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
1
2
3
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
Features
H03N60 Series
Symbol:
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H03N60E (TO-220AB)
P
D
H03N60F (TO-220FP)
Derate above 25°C
H03N60E (TO-220AB)
H03N60F (TO-220FP)
T
j
, T
stg
E
AS
T
L
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
0.4
0.33
-55 to 150
35
260
°C
mJ
°C
W/°C
55
28
W
Value
3
12
±30
Units
A
A
V
H03N60E, H03N60F
HSMC Product Specification