HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
H04N60 Series Pin Assignment
Tab
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
1
2
3
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Features
•
Higher Current Rating
•
Lower RDS(on)
•
Lower Capacitances
•
Lower Total Gate Charge
•
Tighter VSD Specifications
•
Avalanche Energy Specified
1
2
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
D
G
S
H04N60 Series
Symbol:
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H04N60E (TO-220AB)
P
D
H04N60F (TO-220FP)
Derate above 25°C
H04N60E (TO-220AB)
H04N60F (TO-220FP)
T
j
, T
stg
E
AS
T
L
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
0.56
0.2
-55 to 150
250
260
°C
mJ
°C
W/°C
70
30
W
Value
4
16
±30
Units
A
A
V
H04N60E, H04N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
