HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 1/5
H10N60 Series
N-Channel Power MOSFET (600V,10A)
H10N60 Series
Tab
Applications
•
Switch Mode Power Supply
•
Uninterruptable Power Supply
•
High Speed Power Switching
1
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
Features
•
H10N60
is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
•
Advanced termination scheme to provide enhanced voltageblocking capability
•
Avalanche Energy Specified
•
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
•
The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
1 2
3-Lead
TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3
Pin 3: Source
H10N60 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Continuous Drain Current (V
GS
@10V, T
C
=25 C)
Continuous Drain Current (V
GS
@10V, T
C
=100
o
C)
Pulsed Drain Current
*1
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
o
C)
P
D
Linear Derating Factor
E
AS
I
AR
E
AR
T
J
T
stg
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Operating Junction Temperature Range
Storage Temperature Range
TO-220AB
TO-220FP
TO-220AB
TO-220FP
68
10
66
-55 to 150
-55 to 150
o
Parameter
Value
600
10
6.4
36
±30
150
50
1.25
0.4
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T
J
=25°C, L=1.2mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤14A,
di/dt≤130A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
H10N60 Series
Parameter
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
Value
TO-220AB
TO-220FP
62
1.3
3.5
Units
°C/W
°C/W
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
