HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 1/4
H12N60F
N-Channel Power MOSFET (600V,12A)
H12N60F
Applications
•
Switch Mode Power Supply
•
Uninterruptable Power Supply
•
High Speed Power Switching
1
2
3
3-Lead
TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
H12N60F Series Symbol
Features
•
H10N60F
is a High voltage NChannel enhancement mode power MOSFET
D
chip fabricated in advanced silicon epitaxial planar technology
G
•
Advanced termination scheme to provide enhanced voltageblocking capability
S
•
Avalanche Energy Specified
•
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
•
The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Continuous Drain Current (V
GS
@10V, T
C
=25
o
C)
Continuous Drain Current (V
GS
@10V, T
C
=100 C)
Pulsed Drain Current
*1
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
o
C)
P
D
Linear Derating Factor
E
AS
I
AR
E
AR
T
J
T
stg
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Operating Junction Temperature Range
Storage Temperature Range
TO-220AB
TO-220FP
TO-220AB
TO-220FP
68
12
66
-55 to 150
-55 to 150
o
Parameter
Value
600
12
7.6
40
±30
175
50
1.43
0.41
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T
J
=25°C, L=1.2mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤14A,
di/dt≤130A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
Parameter
TO-220AB
Value
1.3
5
TO-220FP
Units
°C/W
°C/W
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
62
H10N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
