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H12N65 参数 Datasheet PDF下载

H12N65图片预览
型号: H12N65
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET ( 650V , 12A ) [N-Channel Power MOSFET (650V,12A)]
分类和应用:
文件页数/大小: 6 页 / 206 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.03.24
Revised Date :2009.08.05
Page No. : 1/6
H12N65 Series
N-Channel Power MOSFET (650V,12A)
H12N65 Series
Tab
Applications
Switch Mode Power Supply
Uninterruptable Power Supply
High Speed Power Switching
1
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
Features
H12N65 Series
is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
Advanced termination scheme to provide enhanced voltageblocking capability
Avalanche Energy Specified
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
1
2
3
3-Lead
TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
H12N65F Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
V
GS
Parameter
Drain-Source Voltage
Drain Current (V
GS
@10V, T
C
=25 C)
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
o
C)
P
D
Linear Derating Factor
E
AS
I
AR
E
AR
T
J
T
stg
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Operating Junction Temperature Range
Storage Temperature Range
TO-220AB
TO-220FP
TO-220AB
TO-220FP
990
12
22
-55 to 150
-55 to 150
o
Value
650
12
±30
175
50
1.43
0.41
Units
V
A
V
W
W/°C
mJ
A
mJ
°C
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T
J
=25°C, L=1.2mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤14A,
di/dt≤130A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Characteristics
Symbol
JC
JA
Parameter
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
TO-220AB
TO-220FP
Value
1.3
5
Units
°C/W
°C/W
62
H10N65 Series
HSMC Product Specification