HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2002.02.18
Page No. : 1/3
H2584
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2584 is designed for use in low voltage and low dropout
regulator applications.
Absolute Maximum Ratings
TO-220
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -20 V
VCEO Collector to Emitter Voltage..................................................................................... -15 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ........................................................................................................... -10 A
Characteristics
(Ta=25°C)
Symbol
*BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
-15
-
-
-
-
-
2
1
Typ.
-
-
-
-
-
-
-
15
Max.
-
-10
-20
-2
-1.5
-2
60
60
Unit
V
uA
uA
mA
V
V
K
K
Test Conditions
IC=-100mA
VCB=-20V
VCE=-15V
VEB=-5V
IC=-10A, IB=-10mA
IC=-5A, VCE=-1.7V
IC=-500mA, VCE=-1.7V
IC=-10A, VCE=-1.7V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
H2584
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
