HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200613
Issued Date : 2006.07.01
Revised Date : 2006.07.12
Page No. : 1/4
H2302N
N-Channel Enhancement-Mode MOSFET (20V, 2.4A)
H2302N Pin Assignment & Symbol
3
2
3-Lead Plastic
SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Drain
1
Features
•
R
DS(on)
<60mΩ@V
GS
=4.5V, I
D
=2.8A
•
R
DS(on)
<115mΩ@V
GS
=-2.5V, I
D
=2A
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Fully Characterized Avalanche Voltage and Current
•
Improved Shoot-Through FOM
Gate
Source
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
*2
Parameter
Ratings
20
±8
2.4
8
0.9
0.57
-55 to +150
145
Units
V
V
A
A
W
W
°C
°C/W
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in
2
2oz Cu PCB board
H2302N
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
