HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6715
Issued Date : 1996.02.01
Revised Date : 2001.05.28
Page No. : 1/3
H2585
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2585 is designed for use in low voltage and low drop out
regulator applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -20 V
VCEO Collector to Emitter Voltage .................................................................................... -15 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................. -5 A
Characteristics
(Ta=25°C)
Symbol
*BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
Cob
Min.
-15
-20
-
-
-
-
-
-
1
1
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-10
-20
-2
-1.5
-1.5
-2
60
60
100
Unit
V
V
uA
uA
mA
V
V
V
K
K
pF
Test Conditions
IC=-100mA
IC=-10mA
VCB=-20V
VCE=-15V
VEB=-5V
IC=-3A, IB=-3mA
IC=-5A, IB=-5mA
IC=-3A, VCE=-1.7V
IC=-500mA, VCE=-1.7V
IC=-5A, VCE=-1.7V
VCB=-10V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
H2585
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
