HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6240-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
H2N4124
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4124 is designed for general purpose switching and
amplifier applications.
Features
•
Complementary to H2N4126
•
Low Collector to Emitter Saturation Voltage
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°C
Junction Temperature................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................. 350 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCEO Collector to Emitter Voltage ..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ....................................................................................................... 200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
30
25
5.0
-
-
-
-
120
60
300
-
Max.
-
-
-
50
50
0.3
950
360
-
-
4
Unit
V
V
V
nA
nA
V
mV
Test Conditions
IC=10uA, IE=0
IC=1mA. IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=3V, IC=0
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=1V, IC=2mA
VCE=1V, IC=50mA
VCE=20V, IC=10mA,, f=100MHz
VCB=5V, IE=0, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
