HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6210-A
Issued Date : 1998.02.01
Revised Date : 2000.09.15
Page No. : 1/4
H2N5087
PNP EPITAXIAL PLANAR TRANSISTOR
Description
This device was designed for low noise,high gain,general purpose
amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -50 V
VCEO Collector to Emitter Voltage .................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................ -3 V
IC Collector Current ......................................................................................................... -50mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-50
-50
-3
-
-
-
-
250
250
250
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.3
-0.85
800
-
-
-
4.0
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-35V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-5V
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
IC=-0.5mA, VCE=-5V, f=100MHz
VCB=-5V, f=1MHz
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
