HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000.09.15
Page No. : 1/3
H2N5366
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5366 is designed for general purpose applications requiring
high breakdown voltages.
Features
•
This device was designed for use as general purpose amplifier and switches.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -40 V
VCEO Collector to Emitter Voltage .................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-40
-40
-4
-
-
-
-
-
-
80
100
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-250
-1
-1.1
-2
-
-
-
-
10
Unit
V
V
V
nA
nA
mV
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-45V, IE=0
VEB=-3V. IC=0
IC=-50mA, IB=-5mA
IC=-300mA, IB=-30mA
IC=-50mA, IB=-5mA
IC=-300mA, IB=-30mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-5V, IC=-300mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
PF
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
