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H2N5401 参数 Datasheet PDF下载

H2N5401图片预览
型号: H2N5401
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 41 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号H2N5401的Datasheet PDF文件第2页浏览型号H2N5401的Datasheet PDF文件第3页浏览型号H2N5401的Datasheet PDF文件第4页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 1/4
H2N5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5401 is designed for general purpose applications requiring
high breakdown voltages.
Features
Complements to NPN Type H2N5551
High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage ................................................................................... -150 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-120V, IE=0
VEB=-3V. IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
MHz
pF
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE2
Rank
Range
H2N5401
A
80-200
N
100-240
C
160-400
HSMC Product Specification