HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6232-B
Issued Date : 1998.01.09
Revised Date : 2000.09.15
Page No. : 1/3
H2N6426
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
BVCEO Collector to Emitter Voltage................................................................................... 40 V
BVCBO Collector to Base Voltage ...................................................................................... 40 V
BVEBO Emitter to Base Voltage ......................................................................................... 12 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
Cob
Min.
40
40
12
-
-
-
-
-
-
-
20
30
20
-
Typ.
-
-
-
-
-
-
0.71
0.9
1.52
1.24
-
-
-
5.4
Max.
-
-
-
1.0
50
50
1.2
1.5
2.0
1.75
200
300
200
7.0
Unit
V
V
V
uA
nA
nA
V
V
V
V
K
K
K
pF
Test Conditions
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VEB=25V, IB=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=50mA, IB=0.5mA
IC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA
VCE=5V, IC=50mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
