HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6754-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
H2N6668
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6668 is designed for general-purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... -80 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
*BVCEO
IEBO
ICEO
ICEV
*VCE(sat)1
*VCE(sat)2
VBE(on)1
VBE(on)2
*hFE1
*hFE2
Min.
-80
-80
-
-
-
-
-
-
-
1
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-100
-1
-300
-2
-3
-2.8
-4.5
20
-
Unit
V
V
mA
mA
uA
V
V
V
V
K
Test Conditions
IC=-10mA
IC=-200mA
VEB=-5V
VCE=-80V
VCE=-80V, VBE(off)=-1.5V
IC=-5A, IB=-10mA
IC=-10A, IB=-100mA
IC=-5A, VCE=-3V
IC=-10A, VCE=-3V
IC=-5A, VCE=-3V
IC=-10A, VCE=-3V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
