HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 1/4
H2N6718V
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718V is designed for general purpose medium power
amplifier and switching.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................... 1.6 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
250
-
-
20
Unit
V
V
V
nA
mV
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=80V, IE=0
IC=350mA, IB=35mA
IC=50mA, VCE=1V
IC=250mA, VCE=1V
IC=500mA, VCE=1V
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
