HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200803
Issued Date : 2005.03.13
Revised Date :2010,03,04
Page No. : 1/5
H2N7002K
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drain-Source Voltage ............................................................................................................................................ 60 V
Drain-Gate Voltage (R
GS
=1MΩ)............................................................................................................................. 60 V
Gate-Source Voltage ...........................................................................................................................................
±20
V
(1)
Continuous Drain Current (T
A
=25°C) ............................................................................................................. 200 mA
(1)
Continuous Drain Current (T
A
=100°C) ........................................................................................................... 115 mA
(2)
Pulsed Drain Current (T
A
=25°C) .................................................................................................................... 800 mA
Total Power Dissipation (T
C
=25°C).................................................................................................................. 200 mW
Derate above 25°C .................................................................................................................................. 0.16 mW /
°C
Storage Temperature............................................................................................................................... -55 to 150
°C
Operating Junction Temperature ............................................................................................................. -55 to 150
°C
Lead Temperature, for 10 second Soldering ...................................................................................................... 260
°C
Gate Source ESD Rating……………………………………………………………………………………………….… 2KV
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient................................................................................................... 625
°C
/ W
Electrical Characteristics
(T
A
=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current, Forward
Gate Source leakage Current, Reverse
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source On-State Voltage
Symbol
BV
DSS
V
GS(th)
I
GSS/F
I
GSS/R
I
DSS
I
D(ON)
V
DS(ON)
Test Conditions
V
GS
=0, I
D
=10uA
V
DS
=2.5V, I
D
=0.25mA
V
GS
=+20V, V
DS
=0
V
GS
=-20V, V
DS
=0
V
DS
=48V, V
GS
=0
V
DS
>2V
DS(ON)
, V
GS
=10V
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
I
D
=75mA, V
GS
=4.5V
Static Drain-Source On-State Resistance
Forward Transconductance
Turn-on Delay Time
Turn-off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
G
FS
t
d(on)
t
d(off)
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0, f=1MHz
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
V
DS
>2V
DS(ON)
, I
D
=200mA
(V
DD
=50V, R
D
=250Ω,
V
GS
=10V, R
G
=50Ω)
-
-
80
-
-
-
-
-
-
-
-
20
40
50
25
5
5.0
5.0
-
-
-
Min
60
1
-
-
-
500
-
-
Typ.
-
-
-
-
-
-
-
-
Max
-
2.0
10
-10
10
-
0.375
3.75
Unit
V
V
uA
uA
uA
mA
V
V
Ω
Ω
Ω
mS
nS
nS
pF
pF
pF
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
H2N7002K
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
