HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200606
Issued Date : 2006.03.01
Revised Date : 2006.05.04
Page No. : 1/4
H3055LJ
N-Channel Enhancement-Mode MOSFET (20V, 13A)
H3055LJ Pin Assignment
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
D
Internal Schematic
Diagram
G
S
Features
•
R
DS(on)
=45mΩ@V
GS
=2.5V, I
D
=5.2A; R
DS(on)
=35mΩ@V
GS
=4.5V, I
D
=6A
•
High Density Cell Design for Ultra Low On-Resistance
•
High Power and Current Handing Capability
•
Fully Characterized Avalanche Voltage and Current
•
Ideal for Li ion Battery Pack Applications
Applications
•
Battery Protection
•
Load Switch
•
Power Management
Absolute Maximum Ratings
(T =25 C, unless otherwise noted)
o
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Parameter
Ratings
20
±12
13
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
*2: 1-in
2
2oz Cu PCB board
H3055LJ
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
