HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
•
8-Lead Plastic
SO-8
Package Code: S
H4435S Symbol & Pin Assignment
Features
•
R
DS(on)
=20mΩ@V
GS
=-10V, I
D
=-9.1A
•
R
DS(on)
=35mΩ@V
GS
=-4.5V, I
D
=-6.9A
•
Advanced trench process technology
•
High Density Cell Design for Ultra Low On-Resistance
5
6
7
8
4
3
2
1
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
*2
Parameter
Ratings
-30
±20
-9.1
-50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
*1: Maximum DC current limited by the package
*2: 1-in
2
2oz Cu PCB board
H4435S
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
