HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics
Characteristic
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
NOTE: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Spec. No. : MOS200519
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 2/5
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
g
g
fs
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=30A
V
GS
=10V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=24V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=0V, V
GS
=1V at 1MHz
V
DS
=10V, I
D
=35A
25
-
-
1
-
-
-
-
-
-
-
1.6
-
-
1
6
-
18
11
3
1
±100
-
-
V
mΩ
V
uA
nA
Ω
S
Q
g
Q
gs
Q
gd
td(on)
tr
td(off)
tf
C
iss
C
oss
C
rss
V
DS
=15V, V
GS
=0V, f=1MHz
V
DD
=15V, R
L
=15Ω, I
D
=1A
V
GEN
=10V, R
G
=24Ω
V
DS
=15V, I
D
=35A, V
GS
=10V
-
-
-
-
-
-
-
-
-
-
18.4
3.57
2.9
11.7
3.87
32.13
5.4
1176.3
268.43
142.67
-
-
-
-
-
nS
-
-
-
-
-
pF
nC
I
S
V
SD
I
S
=20A, V
GS
=0V
-
-
-
0.87
35
1.5
A
V
H50N03E
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
