HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 1/5
H50N03J
N-Channel Enhancement-Mode MOSFET (25V, 50A)
H50N03J Pin Assignment
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Features
•
R
DS(on)
=6mΩ@V
GS
=10V, I
D
=30A
•
R
DS(on)
=9mΩ@V
GS
=4.5V, I
D
=30A
•
Advanced trench process technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Specially Designed for DC/DC Converters and Motor Drivers
•
Fully Characterized Avalanche Voltage and Current
•
Improved Shoot-Through FOM
D
Internal Schematic
Diagram
G
S
Maximum Ratings & Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
*1
Maximum Power Dissipation
T
A
=25
o
C
T
A
=75
o
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
E
AS
R
θJC
R
θJA
Value
25
±20
50
350
70
42
-55 to 150
300
1.8
40
O
O
Units
V
V
A
A
W
W
o
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
I
D
=50A, V
DD
=25V, L=0.1mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)
*2
*1: Maximum DC current limited by the package.
*2: 1-in
2
2oz Cu PCB board
C
mJ
C/W
C/W
Switching
Test Circuit
V
DD
Switching
Waveforms
ton
td(on)
toff
tr td(off)
90%
tf
90 %
V
IN
V
GEN
R
G
G
D
V
OUT
Output, V
OUT
10%
10%
Inverted
90%
50%
50%
S
Input, V
IN
10%
Pulse Width
H50N03J
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
