HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200905
Issued Date : 2009.02.27
Revised Date : 2010.06.30
Page No. : 1/4
H8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
8-Lead Plastic
TSSOP-8L
Package Code: TS
H8205A Symbol & Pin Assignment
8
7
6
5
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Q2
Q1
1
2
3
4
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Features
R
DS(on)
=40m@V
GS
=2.5V, I
D
=5.2A; R
DS(on)
=25m@V
GS
=4.5V, I
D
=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
Applications
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current (Pulsed)
*1
o
Total Power Dissipation @T
A
=25 C
Parameter
Ratings
20
8
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
C
C/W
Total Power Dissipation @T
A
=75
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
*2: 1-in
2
2oz Cu PCB board
H8205A
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
