HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6801
Issued Date : 1995.11.17
Revised Date : 2002.10.24
Page No. : 1/3
HBAV70
SWITCHING DIODE
Description
The HBAV70 consists of two diodes in a plastic surface mount
package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and
thin-film circuits.
SOT-23
Features
•
Small SMD Package (SOT-23)
•
Ultra-high Speed
•
Low Forward Voltage
•
Fast Reverse Recovery Time
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -65 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 70 V
Forward Current ............................................................................................................. 200 mA
Repetitive Forward Current ............................................................................................ 500 mA
Characteristics
(Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
Condition
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=100mA
VR=70
VR=0, f=1MHz
IF=IR=10mA, RL=100Ω
measured at IR=1mA, VR=5V
Min
70
-
-
-
-
-
-
-
Max Unit
-
V
715 mV
855 mV
1100 mV
1300 mV
5
uA
1.5
pF
15
nS
HBAV70
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
