HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200216
Issued Date : 1998.07.27
Revised Date : 2002.10.24
Page No. : 1/3
HBAW56
HIGH-CONDUCTANCE ULTRA DIODE
Description
The HBAW56 consists of two high-speed switching diodes with
common anodes, fabricated in planar technology, and encapsulated
in the small plastic SMD SOT23 package.
SOT-23
Features
•
Small SMD Package (SOT-23)
•
Ultra-high Speed
•
Low Forward Voltage
•
Fast Reverse Recovery Time
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -65 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 85 V
Repetitive Reverse Voltage ................................................................................................. 75 V
Forward Current ............................................................................................................. 215 mA
Repetitive Forward Current ........................................................................................... 125 mA
Forward Surge Current (1ms)......................................................................................... 450 mA
Characteristics
(Ta=25°C)
Characteristic
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
Condition
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=0, f=1MHz
IF=IR=10mA, RL=100Ω
measured at IR=1mA
Min
-
-
-
-
-
-
-
Max
715
855
1000
1250
1
2
4
Unit
mV
mV
mV
mV
uA
pF
nS
HBAW56
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
