HBC517 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HA200217

Issued Date : 2002.09.01

Revised Date : 2005.02.04

Page No. : 1/4

HBC517

NPN EPITAXIAL PLANAR TRANSISTOR

Description

General Purpose High Darlington Transistor

Absolute Maximum Ratings

TO-92

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) ............................................................................................................... 625 mW

•

Maximum Voltages and Currents (T

A

=25°C)

V

CBO

Collector to Base Voltage ........................................................................................................................... 40 V

V

CEO

Collector to Emitter Voltage ........................................................................................................................ 30 V

V

EBO

Emitter to Base Voltage .............................................................................................................................. 10 V

I

C

Collector Current ........................................................................................................................................ 500 mA

Electrical Characteristics

(T

A

=25°C)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Collector Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

hFE

V

CE(sat)

V

BE(sat)

f

T

C

ob

Test Condition

I

C

=0.1mA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=1mA, I

C

=0

V

CB

=40V, I

E

=0

V

EB

=10V, I

C

=0

I

C

=100mA, V

CE

=2V

I

C

=100mA, I

B

=1mA

I

C

=100mA, I

B

=1mA

I

C

=100mA, V

CE

=2V,

f=100MHz

V

CB

=10V, f=1MHz, I

E

=0

Min.

40

30

10

-

-

30K

-

-

-

-

Typ.

-

-

-

-

-

-

-

1.5

220

5

Max.

-

-

-

1

1

-

1

2

-

-

V

V

MHz

pF

Unit

V

V

V

uA

uA

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

HBC517

HSMC Product Specification