HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6418-C
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/4
HBC547
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC547 is designed for use in driver stage of audio amplifier.
Features
•
High Breakdown Voltage: 45V
•
High DC Current Gain: 110-800 at IC=2mA
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 45 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)1
VBE(on)2
*VBE(sat)1
*VBE(sat)2
*VCE(sat)1
*VCE(sat)2
*hFE
fT
Cob
Min.
50
45
6
-
0.58
-
-
-
-
-
110
-
-
Typ.
-
-
-
-
-
-
0.7
0.9
-
-
-
300
-
Max.
-
-
-
15
0.7
0.77
-
-
0.25
0.6
800
-
4.5
Unit
V
V
V
nA
V
V
V
V
V
V
MHZ
Pf
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA, f=100MHz
VCE=10V, IE=0, f=1MHZ
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
A
110-220
B
200-450
C
420-800
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
