HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200104
Issued Date : 2001.10.01
Revised Date : 2001.10.23
Page No. : 1/3
HBC558
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC558 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 500 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -30 V
VCEO Collector to Emitter Voltage..................................................................................... -30 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current....................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
VBE(on)1
VBE(on)2
*hFE
fT
Cob
Min.
-30
-30
-5
-
-
-
-
-
-600
-
110
-
-
Typ.
-
-
-
-
-90
-250
-700
-900
-
-
-
150
-
Max.
-
-
-
-15
-300
-650
-
-
-750
-800
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IB=-2mA
VCE=-5V, IB=-10mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
hFE
A
110-220
B
200-450
C
420-800
HBC558
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
