HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6828
Issued Date : 1993.12.07
Revised Date : 2002.10.24
Page No. : 1/3
HBC846
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC846 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150
°C
Junction Temperature.................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 65 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
VBE(on)1
VBE(on)2
*hFE
fT
Cob
Min.
80
65
6
-
-
-
-
-
580
-
110
-
-
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
hFE
A
110-220
B
200-450
C
420-800
HBC846
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
