HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6829
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
HBC857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC857 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150
°C
Junction Temperature.................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
VBE(on)1
VBE(on)2
*hFE
fT
Cob
Min.
-50
-45
-5
-
-
-
-
-
-600
-
110
-
-
Typ.
-
-
-
-
-90
-250
-700
-900
-
-
-
150
-
Max.
-
-
-
-15
-300
-650
-
-
-750
-800
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
hFE
A
110-220
B
200-450
C
420-800
HBC857
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
