HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6621-A
Issued Date : 1994.09.08
Revised Date : 2000.10.01
Page No. : 1/2
HBD238
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBD238 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
BVCER Emitter to Base Voltage ...................................................................................... -100 V
IC Collector Current ............................................................................................................. -2 A
IC Collector Current (Pulse) ................................................................................................ -6 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-100
-80
-5
-
-
-
-
40
25
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-1
-0.6
-1.3
-
-
-
Unit
V
V
V
uA
mA
V
V
Test Conditions
IC=-1mA
IC=-100mA
IE=-100uA
VCB=-100V
VBE=-5V
IC=-1A, IB=-0.1A
IC=-1A, VCE=-2V
IC=-150mA, VCE=-2V
IC=-1A, VCE=-2V
VCE=-10V, IC=-250mA, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
