HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005.08.16
Page No. : 1/4
HBD437D
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic
package, intented for use in medium power linear and switching applications. The
complementary PNP type is HBD438D.
Absolute Maximum Ratings
(T
A
=25°C)
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
stg
T
J
Parametor
Collector-Base Voltage (I
E
=0)
Collector-Emitter Voltage (V
BE
=0)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Collector Peak Current (t≤10ms)
Base Current
Total Dissipation at
Storage Temperature
Max. Operating Junction Temperature
T
C
=25°C
T
A
=25°C
Value
45
45
45
5
4
7
1
20
1.5
-55 to 150
150
TO-126ML
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Thermal Data
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
5
83
°C/W
°C/W
Electrical Characteristics
(T
A
=25°C, unless otherwise specified)
Symbol
I
CBO
I
CES
I
EBO
*V
CEO(sus)
*V
CE(sat)
*V
BE
Parameter
Collector Cut-off Current (I
E
=0)
Collector Cut-off Current (V
BE
=0)
Emitter Cut-off Current (I
C
=0)
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Test Conditions
V
CB
=45V
V
CE
=45V
V
EB
=5V
I
C
=100mA, I
B
=0
I
C
=2A, I
B
=0.2A
I
C
=10mA,V
CE
=5V
I
C
=2A, V
CE
=1V
I
C
=10mA, V
CE
=5V
*h
FE
*h
FE1
/h
FE2
f
T
DC Current Gain
Matched Pair
Transition Frequency
I
C
=0.5A, V
CE
=1V
I
C
=2A, V
CE
=1V
I
C
=0.5A, V
CE
=1V
I
C
=0.25A, V
CE
=1V
Min.
-
-
-
45
-
-
-
30
85
40
-
3
Typ.
-
-
-
-
0.4
0.58
-
130
140
-
-
-
Max.
100
100
1
-
0.6
-
1.2
-
-
-
1.4
-
MHz
Unit
uA
uA
mA
V
V
V
V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBD437D
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
