HBF421 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HA200214

Issued Date : 2002.08.01

Revised Date : 2004.06.18

Page No. : 1/4

HBF421

PNP EPITAXIAL PLANAR TRANSISTOR

Description

Video B-class Power stages in TV-receivers

TO-92

Absolute Maximum Ratings

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................................................... 830 mW

•

Maximum Voltages and Currents (Ta=25°C)

V

CBO

Collector to Base Voltage ........................................................................................................................ -300 V

V

CEO

Collector to Emitter Voltage ..................................................................................................................... -300 V

V

EBO

Emitter to Base Voltage ............................................................................................................................... -5 V

I

C

Collector Current ........................................................................................................................................ -50 mA

I

BM

Peak Base Current ................................................................................................................................... -50 mA

I

CM

Peak Collector Current ........................................................................................................................... -100 mA

Electrical Characteristics

(Ta=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

*V

CE(sat)

*h

FE

f

T

Min.

-300

-300

-5

-

-

-

50

60

Typ.

-

-

-

-

-

-

-

-

Max.

-

-

-

-100

-100

-0.6

-

-

MHz

Unit

V

V

V

nA

nA

V

I

C

=-100uA, I

E

=0

I

C

=-1mA, I

B

=0

I

E

=-10uA, I

C

=0

V

CB

=-200V, I

E

=0

V

EB

=-5V, I

E

=0

I

C

=-30mA, I

B

=-3mA

V

CE

=-20V, I

C

=-25mA

I

E

=-10mA, V

CE

=-10V, f=100MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

HBF421

HSMC Product Specification