欢迎访问ic37.com |
会员登录 免费注册
发布采购

HBF4522D 参数 Datasheet PDF下载

HBF4522D图片预览
型号: HBF4522D
PDF下载: 下载PDF文件 查看货源
内容描述: NPN型三重扩散平面晶体管 [NPN TRIPLE DIFFUSION PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 35 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HBF4522D的Datasheet PDF文件第2页浏览型号HBF4522D的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use in the monitor dynamic focus circuit. It
can be used up to 19" monitor with working frequency as high as
100KHz.
TO-126ML
Features
High Breakdown Voltage
Low C-E Saturation Voltage
High Cutoff Frequency
High Current Gain
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current ................................................................................................................ 20 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
550
550
7
-
-
-
100
90
Typ.
-
-
-
-
-
0.35
150
-
Max.
-
-
-
1
100
0.5
200
-
Unit
V
V
V
uA
nA
V
MHz
Test Conditions
IC=1mA
IC=100uA
IE=10uA,
VCB=500V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=30mA
VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBF4522D
HSMC Product Specification