HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200308
Issued Date : 2003.11.01
Revised Date : 2003.11.28
Page No. : 1/4
HBT139XE
Three Quadrant Triac
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in
general purpose bidirectional switching and phase control applications,
where high sensitivity is required in all four quadrants.
Quick Reference Data
Part No.
HBT139DE
V
DRM
(V)
600
I
T(RMS)
(A)
16
I
TSM
(A)
140
TO-220AB
Quadrant
I - II - III
Pin Configuration
Pin
1
2
3
tab
Description
Main terminal 1
Main terminal 2
Gate
Main terminal 2
tab
1 2 3
G
Symbol
T2
T1
Limtiing Values
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
Parameter
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
I
2
t for fusing
Repetitive rate of rise of on-state current after triggering
T2+ G+
T2+ G-
T2- G-
T2- G+
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage Temperature Range
Operating junction temperature
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
Max.
600
16
140
98
50
50
50
-
2
10
5
0.5
150
125
Units
V
A
A
A
2
S
A/us
A/us
A/us
A/us
A
V
W
W
°C
°C
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
Tstg
Tj
HBT139XE
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
