HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2001.05.28
Page No. : 1/2
HBU407
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBU407 is designed for use in TV Horizontal output and
Switching applications.
Features
•
High Breakdown Voltage
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 60 W
•
Maximum Voltages and Currents (Ta=25°C)
VCEO Collector to Emitter Voltage ................................................................................... 150 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ............................................................................................................. 7 A
IB Base Current .................................................................................................................... 4 A
Characteristics
(Ta=25°C)
Symbol
*BVCEO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
FT
Min.
150
-
-
-
-
25
35
10
10
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
5
1
1
1.2
-
200
-
-
Unit
V
mA
mA
V
V
Test Conditions
IC=100mA, IB=0
VCE=400V
VEB=6V, IC=0
IC=5A, IB=0.5A
IC=5A, IB=0.5A
IC=500mA, VCE=5V
IC=2A, VCE=5V
IC=5A, VCE=5V
IC=500mA, VCE=10V, f=1MHz
MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE2
Rank
Range
B
35-85
C
75-125
D
115-200
HBU407
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
