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HE8050 参数 Datasheet PDF下载

HE8050图片预览
型号: HE8050
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 39 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HE8050的Datasheet PDF文件第2页浏览型号HE8050的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6112
Issued Date : 1992.09.30
Revised Date : 2001.08.13
Page No. : 1/3
HE8050
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8050 is designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Features
High total power dissipation (PT: 2W, TC=25°C)
High collector current (IC: 1.5A)
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 40 V
VCEO Collector to Emitter Voltage ..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ........................................................................................................... 1.5 A
IB Base Current ............................................................................................................. 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
40
25
6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
--
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=100uA
IC=2mA
IE=100uA
VCB=35V
VEB=6V
IC=0.8A, IB=80mA
IC=0.8A, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA
MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification on hFE2
Rank
Range
HE8050
B
85-160
C
120-200
D
160-320
E
250-500
HSMC Product Specification