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HE8551 参数 Datasheet PDF下载

HE8551图片预览
型号: HE8551
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 40 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HE8551的Datasheet PDF文件第2页浏览型号HE8551的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6113-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 1/3
HE8551
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8551 is designed for use in 2W output amplifier of portable radios
in class B push-pull operation.
Features
High Total Power Dissipation (PT: 2W, TC=25°C)
High Collector Current (IC: 1.5A)
Complementary to HE8051
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°C
Junction Temperature ............................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ................................................................................................... 2 W
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ...................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-2mA, IB=0
IE=-100uA, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification on hFE2
Rank
Range
B
85-160
C
120-200
D
190-300
E
250-500
HSMC Product Specification