HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6102
Issued Date : 1992.08.25
Revised Date : 2002.04.10
Page No. : 1/4
HE9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9014 is designed for use in pre-amplifier of low level and low
noise.
Features
•
High Total Power Dissipation (P
D
: 450mW)
•
Complementary to HE9015
•
High hFE and Good Linearity
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Cob
fT
Min.
50
45
5
-
-
-
-
0.58
100
-
150
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
2.20
270
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification on hFE
Rank
Range
HE9014
B
100-300
C
200-600
D
400-1000
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
