HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6101
Issued Date : 1992.08.25
Revised Date : 2002.02.18
Page No. : 1/4
HE9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE9015 is designed for use in pre-amplifier of low level and low
noise.
Features
•
High Total Power Dissipation (PD: 450mW)
•
Complementary to HE9014
•
High hFE and Good Linearity
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage ..................................................................................... -45 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current....................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Cob
fT
Min.
-50
-45
-5
-
-
-
-
-0.6
100
-
100
Typ.
-
-
-
-
-
-0.20
-0.82
-0.65
200
4.5
190
Max.
-
-
-
-50
-50
-0.7
-1
-0.75
600
7
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCB=-10V, f=1MHz, IE=0
VCE=-5V, IC=-10mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification on hFE1
Rank
Range
HE9015
B
100-300
C
200-600
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
