HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 2000.11.01
Page No. : 1/2
HI122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI122 is designed of general purpose and low speed switching
applications.
Features
•
High DC current gain
•
Bult-in a damper diode at E-C
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150°C
Junction Temperature ......................................................................................................+150°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 20W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................. 8 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
5
-
-
-
-
-
-
-
1K
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
130
Max.
-
-
-
10
10
2
2
4
4.5
2.8
12K
-
-
Unit
V
V
V
uA
uA
mA
V
V
V
V
Test Conditions
IC=1mA
IC=30mA
IE=1mA
VCB=100V
VCE=50V
VEB=5V
IC=4A, IB=16mA
IC=8A, IB=80mA
IC=8A, IB=80mA
VCE=4V, IC=4A
VCE=4V, IC=4A
VCE=4V, IC=8A
VCB=10V, f=1MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
