HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9004
Issued Date : 1994.01.25
Revised Date : 2001.05.31
Page No. : 1/2
HI3055
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3055 is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current .................................................................................................................... 6 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Min.
70
60
5
-
-
-
-
-
-
-
20
5
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
20
20
50
0.5
1.1
8
1.8
100
-
-
Unit
V
V
V
uA
uA
uA
mA
V
V
V
Test Conditions
IC=200mA, IE=0
IC=10mA, IB=0
IE=10mA, IC=0
VCB=70V, IE=0
VCE=70V, VEB(off)=1.5V
VCE=30V, IB=0
VEB=5V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
VCE=4V, IC=4A
VCE=4V, IC=4A
VCE=4V, IC=10A
VCE=10V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HI3055
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
