HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9001
Issued Date : 1996.02.28
Revised Date : 2002.03.04
Page No. : 1/3
HI31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI31C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-251
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current .............................................................................................................. 3 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
100
-
-
-
-
-
25
10
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
20
50
1
1.2
1.8
-
50
-
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
VCE=100V, VEB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HI31C
HSMC Product Specification