HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9002
Issued Date : 1994.03.02
Revised Date : 2002.01.17
Page No. : 1/3
HI32C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI32C is designed for use in general purpose amplifier and low
speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-251
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 15W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................. -100 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ............................................................................................................. -3 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-100
-100
-
-
-
-
-
25
10
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-20
-50
-1
-1.2
-1.8
-
50
-
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
VCE=-100V, VBE=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-375mA
VCE=-4V, IC=-3A
VCE=-4V, IC=-1A
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HI32C
HSMC Product Specification