HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9013-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
HI42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI42C is designed for use in general purpose amplifier, low
speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -6 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-100
-100
-5
-
-
-
-
-
30
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-500
-1.5
-2
-
75
-
Unit
V
V
V
uA
uA
uA
V
V
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IC=-100uA, IC=0
VCE=-100V, VEB=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-6A, IB=-600mA
VCE=-4V, IC=-6A
VCE=-4V, IC=-300mA
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
