HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
HIRF630
N - Channel MOSFETs
Description
Dynamic dv / dt Rating
•
Repetitive Avalanche Rated
•
Fast Switching
•
Ease of Paralleling
•
Simple Drive Requirements
This N - Channel MOSFETs provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 74 W
•
Maximum Voltages and Currents (Tc=25°C)
Drain To Source Breakdown Voltage ................................................................................ 200 V
Gate To Source Voltage...................................................................................................
±
20 V
Continuous Source Current .................................................................................................. 9 A
Pulsed Drain Current .......................................................................................................... 36 A
Characteristics
(Ta=25°C)
Parameter
ID Tc=25°C Continuous Drain Current, VGS at 10V
EAS
Single Pulse Avalanche Energy (1)
IAR
Avalanche Current (2)
EAR
Repetitive Avalanche Energy (2)
dv / dt
Peak Diode Recovery dv / dt (3)
Symbol
Max.
9
250
9
7.4
5
Units
A
mJ
A
mJ
V / ns
Note : V
DD
=50V, starting T
J
=25°C, L=4.6mH, R
Q
=25Ω, I
AS
=9A
Repetitive rating; width limited by max. Junction temperature. I
SD
≤9A,
di/dt≤120A / us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction to Case
Case to Sink, Flat, Greased Surface
Junction to Ambient
Min.
-
-
-
Typ.
-
0.5
-
Max.
1.7
-
62
Units
°C/W
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
