HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF730 / HIRF730F
N-CHANNEL POWER MOSFET
HIRF730 Series Pin Assignment
Tab
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
Third Generation HEXFETs from international Rectifier provide the
designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
2
3
1
Features
•
Dynamic dv/dt Rating
•
Repetitive Avalanche Rated
•
Fast Switching
•
Ease of Paralleling
•
Simple Drive Requirements
1
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
Parameter
Thermal Resistance
Junction to Case Max.
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62
1.71
3.3
Units
°C/W
°C/W
HIRF730 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Drain to Current (Continuous)
Drain to Current (Pulsed) (*1)
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
Derate above 25°C
TO-220AB
TO-220FP
Single Pulse Avalanche Energy (*2)
Avalanche Current (*1)
Repetitive Avalanche Energy (*1)
Peak Diode Recovery (*3)
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
Parameter
Value
400
5.5
22
±20
74
38
0.58
0.3
290
5.5
7.4
4
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
P
D
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
E
AS
I
AR
E
AR
d
v
/d
t
T
j
T
stg
T
L
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V
DD
=50V, starting T
j
=25°C, L=16mH, R
G
=25Ω, I
AS
=5.5A
*3: I
SD
≤5.5A,
di/dt≤90A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
HIRF730, HIRF730F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
