HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
HIRF740 Series Pin Assignment
Tab
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This N-Channel MOSFETs provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance and cost-
effectiveness.
2
3
1
Features
•
Dynamic dv/dt Rating
•
Repetitive Avalanche Rated
•
Fast Switching
•
Ease of Paralleling
•
Simple Drive Requirements
1
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
Parameter
Thermal Resistance
Junction to Case Max.
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62
1.71
3.3
Units
°C/W
°C/W
HIRF740 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Drain to Current (Continuous)(V
GS
@10V, T
C
=25
o
C)
Drain to Current (Continuous)(V
GS
@10V, T
C
=100
o
C)
Drain to Current (Pulsed)
*1
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
Derate above 25°C
TO-220AB
TO-220FP
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Peak Diode Recovery
*3
Operating Junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1.6mm
from case for 10 seconds
Parameter
Value
400
10
6.3
40
±20
74
38
0.59
0.3
520
10
13
4
-55 to 150
300
Units
V
A
A
A
V
W
P
D
W/°C
mJ
A
mJ
V/ns
°C
°C
E
AS
I
AR
E
AR
d
v
/d
t
T
J
,T
stg
T
L
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V
DD
=50V, starting T
j
=25°C, L=9.1mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤10A,
di/dt≤120A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
HIRF740, HIRF740F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
