HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6019-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HJ1109
PNP EPITAXIAL PLANAR TRANSISTOR
Description
•
Low frequency high voltage amplifier.
•
Complementary pair with HJ1609.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -160 V
BVCES Collector to Emitter Voltage ................................................................................ -160 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ...................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE
*hFE1
*hFE2
FT
Cob
Min.
-160
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
5.5
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-1mA , IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
